Qualcomm and Teleepoch
Enter Into a 3G CDMA Subscriber Unit License Agreement, October
6, 2007
MTN chooses Cambridge Broadband
Networks for multi-service wireless network in Rwanda, October 6,
2007
Brazilian government to
publish 3G bidding rules soon, October 6, 2007
KTF 3G service suffers
from technical problems, October 6, 2007
Argentina’s Personal
lunches 3G service in Rosario, October 6, 2007
Russia has it's first 3G
network, October 6, 2007
AT&T could drop Alcatel-Lucent
as 3G mobile network supplier, October 6, 2007
Enea Extends License Agreement
with ZTE for 3G Handsets, October 2, 2007
LG to unveil premium handsets
in Brazil, October 2, 2007
KTF 3G subscribers doubled
in less than 3 months, October 2, 2007
3G policy in India will
be non-uniform, October 2, 2007
- previous news
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WJ Communications introduces 12 V Power Amplifier for 2.5 and 3G base station
April 23, 2005
WJ Communications, a designer and supplier of RF solutions for the wireless infrastructure and RFID reader markets, introduced a new family of +12 V power amplifiers, the AP501, AP502, AP503 and AP504. The AP series are targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power are required. This combination makes the device a candidate for next generation multi-carrier 2.5/3G, PCS, UMTS and CDMA2000 base stations the company believed.
"The AP5xx family of PA modules provides cost-effective, high performance, high efficiency solutions for next-generation cellular base stations," said Barry Lin, vice president of PAS and high voltage HBT program for WJ Communications. "These modules reflect our breakthrough product design and semiconductor process capabilities. The AP5xx series integrates InGaP/GaAs HBT technology to provide our customers with better performance and greater value. This family of products is consistent with WJ's strategy to aggressively expand its addressable market size by entering the power amplifier segment of the cellular base station market."
Product Overview
The AP series are high dynamic range power amplifier modules optimized for driver or final stage amplifier mobile infrastructure. These devices are multi-stage, and are internally optimized for efficiency and linearity. Each PA module in the family features 50 ohm operation including internal matching for input and output and operates off +12 V without requiring negative biasing voltages. Additionally, an internal active bias allows the devices to maintain high linearity over temperature. The AP's have the added feature of a +5 V power down control pin. A low-cost 29 x 13 x 4 mm metal housing with bolt-down flange allows these devices to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. These devices were developed using the InGaP HBT process.
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