Samsung Electronics Begins Mass Production of Small Footprint, Low-power, 8Mb SRAM

date: August 21, 2001

Samsung Electronics has become the first in the semiconductor industry to apply the 0.13-micron design rule to SRAMs, producing a low-power version suitable for use in mobile phones for next-generation services such as IMT-2000. After developing the low- power 8Mb SRAM early this year, the company is now starting up mass production of the device, part number K6F8016U6B, and will enter full-sale production in the fourth quarter this year. The device is expected to be loaded into 3G mobile handsets, that will be required to process large volumes of video and audio data and make rapid online connections.

The low-power SRAM can process data in 55nanoseconds while operating on 1.8 volts and using less than 1-microamp of power at room temperature. By utilizing 0.13-micron circuit geometry, Samsung’s new chip can be made 30% smaller than current SRAM that use a 0.15-micron design rule. Also the reduced geometry allows for a substantial increase in production efficiency of over 50%.

Samsung has started up mass production applying the 0.13-micron design rule a full three months ahead of the original schedule. Full-scale fabrication facilities will be operative in the fourth quarter. Moreover, Samsung aims to apply the 0.10-micron design rule to SRAMs next year and the 0.08-micron design rule in 2003. Thus, enabling Samsung to secure a leading position in the upcoming market for SRAMs used in 3 generation handsets.

Samsung has maintained the top share of the SRAM market since 1995, producing devices for the 1 generation analog handsets, as well as the 2Gand 2.5Gdigital handsets. This head start in the 3Ghandset market will further its lead in SRAM sales.

Samsung Electronics also plans to come out with a 16M SRAM with 0.13-micron circuitry in the upcoming fourth quarter. This device, too, will be supplied to 3G handset manufacturers worldwide.

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