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Mitsubishi announces new power amplifer module for WCDMAdate: December 12, 2001 Mitsubishi Electric announced the "BA01212" power amplifier module for W-CDMA mobile phones, using gallium-arsenide (GaAs) hetero-junction bipolar transistor (HBT) technology. This product has virtually set a new standard for a low operating voltage at 3.5V and the lower standby current of 50mA by adopting a module circuit configuration and a transistor structure suitable for the W-CDMA systems as well as optimizing their sizes. Applying the GaAs HBT technology leads to power supply from a single source, which reduces the number of peripheral parts such as a negative voltage generator that were essential parts of conventional power amp modules. Also, it has achieved the smallest size in the industry, according to Mitsubishi Electric. It measures 0.05 cubic centimeters (6mm x 6mm x 1.5mm) despite packing into a single unit a two-stage GaAs HBT amplifier and a matching circuit for reducing distortion. As a result, a 35 percent downsizing has been realized, in comparison to former types of modules. The power gain of the amplifier is 26.5dB in normal operations. The leakage power between neighboring channels is -37dBc when detuning at +/-5MHz, and -48dBc at +/-10MHz. Samples will be available from January, at 1,000 yen per unit. Mitsubishi Electric plans to deliver 300,000 units per month.
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