Philips Semiconductors Produces World's First Dual-Mode 2.5G/3G RF Reference Design PCB

date: February 18, 2002

Philips Semiconductors, a division of Royal Philips Electronics, today launches the world's first dual-mode RF reference design for GSM/UMTS handsets, providing manufacturers with a complete RF system for the test and evaluation of 2.5 and 3G mobile phones.

The new 48 x 26mm(2) single side Printed Circuit Board (PCB) -- that is comparable in size to the current radios of single mode GSM phones -- will enable handset manufacturers to produce dual-mode, GSM dual-band/WCDMA radio PCBs. The reference design is the first on the market to include all of the RF components needed to build a GSM/UMTS cellular handset suitable for WCDMA FDD modulation. The highly integrated RF architecture also reduces the number of external components optimizing the size and cost of the PCB.

"The dual-mode RF reference design once again highlights our RF leadership and system expertise in cellular applications," said Jean-Marc Lemenager, Cellular RF product marketing manager, Philips Semiconductors. "Our RF technology has produced a complete solution that enables handset manufacturers to produce low cost, highly integrated, 2.5G and 3G handsets. It will help RF designers reduce design time and speed up time-to-market as 3G technology takes off in 2002."

Philips Semiconductors' unique ability to offer customers highly integrated complete RF solutions for radio PCBs -- based on best-in-class RF QUBiC technology -- makes it the supplier of choice for module makers and handset manufacturers. The circuit board is designed around a complete 3G RF chipset using the low cost, high integration 0.25um QUBiC4 silicon process technology, and includes the 3G Zero IF transmit and receive components the UAA3580 and UAA3581, and Silicon Power Amplifier (PA) UAA3592.

The GSM part of the RF reference design is built around the proven 2.5G Near Zero IF transceiver IC the UAA3536, providing clock frequency to the 2.5 and 3G RF functionality, and the highly efficient 8x10 mm GaAs PA module CGY2017 with its 4x4mm power controller IC UBA1711.

Samples of the complete RF reference design with radio chains for both GSM and UMTS are now available for evaluation purposes, with 3G RF Chipset volume production scheduled for Q4 2002.

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