Qualcomm and Teleepoch
Enter Into a 3G CDMA Subscriber Unit License Agreement, October
6, 2007
MTN chooses Cambridge Broadband
Networks for multi-service wireless network in Rwanda, October 6,
2007
Brazilian government to
publish 3G bidding rules soon, October 6, 2007
KTF 3G service suffers
from technical problems, October 6, 2007
Argentina’s Personal
lunches 3G service in Rosario, October 6, 2007
Russia has it's first 3G
network, October 6, 2007
AT&T could drop Alcatel-Lucent
as 3G mobile network supplier, October 6, 2007
Enea Extends License Agreement
with ZTE for 3G Handsets, October 2, 2007
LG to unveil premium handsets
in Brazil, October 2, 2007
KTF 3G subscribers doubled
in less than 3 months, October 2, 2007
3G policy in India will
be non-uniform, October 2, 2007
- previous news
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Toshiba offers complete MCP solutions for cellphones
July 9, 2003
As part of a continuing effort to provide innovative memory solutions
for cell phones and consumer electronics devices, Toshiba announced the
addition of low power SDRAM and a new, wider configuration of NAND flash
as options for its multi-chip package (MCP) products. Toshiba will develop
two- to six-chip MCPs with various combinations of NOR flash, NAND flash,
Static RAM (SRAM), Pseudo SRAM (PSRAM) and low power SDRAM to meet the
complex memory requirements of digital camera phones and feature-rich
3G cell phones.
Memory requirements for these cellular phones have become increasingly
complex as additional features and applications have been added such as
Internet browsing, text messaging, games, and digital camera functionality.
Tradeoffs in density, speed, cost and power make combinations of several
different types of memory desirable in cell phones, while space limitations
have led designers to turn to MCPs, which enable complex memory subsystems
to be packaged in a single device.
For example, cell phone designers have traditionally used NOR flash memory
for code storage and low-power SRAM or fast, cost-effective PSRAM for
working memory. To accommodate additional storage requirements for increased
applications and data storage, NAND flash is becoming popular because
of its low cost-per-bit, and new low power versions of SDRAM are becoming
new solutions for working memory in feature-rich, 3G cell phones to execute
code stored in NAND flash memory. Low power SDRAM, with a typical speed
of 83MHz and up, combined with NAND flash memory, provides a cost-effective
high performance solution for cell phone memory subsystems. Toshiba can
provide semi-custom combinations of two, three or four types of memory
in densities needed to meet the needs of next-generation, feature-rich
phones.
"By expanding our MCP offering to include low power SDRAM and our new
wider x16 NAND, we're able to offer additional choices of complete, versatile
memory subsystems for advanced cell phones, and support OEM's needs for
higher performance and density in a single component," said Scott Beekman,
business development manager for Toshiba. "Combinations of NAND flash
and low power SDRAM now provide a fast, cost-effective alternative to
meet the complete memory requirements of an advanced cell phone when used
with cell phone chip sets that support NAND for code storage."
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3G Motorola A920
