WJ Communications introduces power amps for 3G base stations

July 29, 2004

WJ Communications, a designer and supplier of RF semiconductors and multi-chip modules, announced that it has introduced seven intermediate power amplifiers. These RF amplifiers are specifically designed for the cellular, ISM and MMDS bands and provide power output in the range of 0.5 to 2.0 W. All of these products are manufactured using WJ's highly reliable InGaP HBT process.

"The ECP series have exceptionally good linearity so their ACPR/ACLR performance is competitive with much higher power LDMOS products," said Ron Buswell, senior vice president of marketing and product line management for WJ Communications. "We believe this family of new products will provide equipment manufacturers high levels of performance and integrated functionality."

Product Overview

The EC intermediate power amplifier series are high dynamic range driver amplifiers in low-cost surface mount packages. The InGaP HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1 dB power. All devices are 100% RF and DC tested. These amplifiers are targeted for use as driver amplifiers in wireless infrastructure for which high linearity and medium power are required.