Qualcomm and Teleepoch
Enter Into a 3G CDMA Subscriber Unit License Agreement, October
6, 2007
MTN chooses Cambridge Broadband
Networks for multi-service wireless network in Rwanda, October 6,
2007
Brazilian government to
publish 3G bidding rules soon, October 6, 2007
KTF 3G service suffers
from technical problems, October 6, 2007
Argentina’s Personal
lunches 3G service in Rosario, October 6, 2007
Russia has it's first 3G
network, October 6, 2007
AT&T could drop Alcatel-Lucent
as 3G mobile network supplier, October 6, 2007
Enea Extends License Agreement
with ZTE for 3G Handsets, October 2, 2007
LG to unveil premium handsets
in Brazil, October 2, 2007
KTF 3G subscribers doubled
in less than 3 months, October 2, 2007
3G policy in India will
be non-uniform, October 2, 2007
- previous news
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Toshiba adds amplifier module for W-CDMA 3G cell phones
June 10, 2003
To meet industry requirements for small, lower-power circuits for cell
phones, Toshiba Corporation announced that the company has extended its
line-up of RF gallium arsenide (GaAs) hetero-junction bipolar transistor
(HBT) modules to include a micro power amplifier for 3G W-CDMA cellular
handsets. The new device, designated S-AL57, features very low power consumption,
high output power and additional functions optimized for cellular handsets.
Toshiba will show the micro power amplifier module, along with other
new microwave and RF devices, at this year's IEEE MTT-S International
Microwave Symposium, held June 10 through 12 in Philadelphia, Pennsylvania.
Toshiba's micro power amplifier is targeted for use in 3G phones using
the W-CDMA protocol. W-CDMA has been selected for the 3G mobiles telephone
systems in Europe, Japan and the United States.
Hideki Ohto, senior manager of application engineering for Small Signal
Discrete Semiconductor Devices, Toshiba, said "This micro power amplifier
for W-CDMA cell phones is an example of our continued innovation to meet
industry demands for improved performance while reducing component size
and power consumption."
The S-AL57 achieves high output power (Po) of 27.0 decibels (dBm) and
gain of 27.5dB with high power added efficiency of 46%. This new power
amplifier incorporates additional functions optimized for cellular handsets,
including low idle current of only 40mA, a bias circuit with temperature
compensation and lower power sensitivity control functions. It operates
from a single 3.5V power supply.
As a GaAs HBT power amplifier module with a bias circuit, the S-AL57
provides excellent linearity, enabling design engineers to achieve high
output power. The small 8-pin package (4.0 x 4.0 x 1.2 millimeters) enables
engineers to create smaller handset designs. The power amplifier module
includes the required RF matching circuits within the package to simplify
system design.
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3G Motorola A920
