Hitachi and TRW Join Forces to Develop Power Amplifier Modules for 3G Telecommunications

date: May 23, 2001 - source: TRW

Hitachi and TRW's new semiconductor company, Velocium, have signed a joint development agreement to design and develop very high-efficiency power amplifier modules for 3G wireless handsets and other wireless devices.

Hitachi, the world leader in power amplifier modules for cell phones, will manufacture the modules using Velocium's technology-leading indium phosphide (InP) semiconductors.

The new power amplifiers are integral to the development of W-CDMA handsets for 3G, the next generation of wireless communications enabling Internet access, high-speed data communications and other high-data-rate applications. According to Gartner Dataquest, shipments of wireless handsets will exceed 700 million units by 2005. 3G is estimated to capture nearly 10 percent of these shipments.

InP is an advanced compound semiconductor that offers a number of performance improvements over currently available semiconductors for power amplification in mobile handsets. These performance improvements result in excellent power efficiency of more than 50 percent and provide the signal quality improvements needed for W-CDMA applications.

"TRW is extremely pleased to be joining forces with Hitachi, a very successful market leader for handset components, in the development of power amplifier modules for the 3G wireless market," said Dwight Streit, Velocium's president. "Their manufacturing capability, coupled with our advanced InP technology, will enable the volume manufacture of wireless handsets with talk times and performance never before available."

"Velocium provides us with InP technology that will enhance the leadership position of the Hitachi power amplifier modules," said Hideo Inayoshi, senior group executive, System Solution Division, Semiconductor & Integrated Circuits Group of Hitachi. "Combining our modules with Velocium's technology will realize high performance and reduce cost."

Both companies will participate in the design and development of the modules, contributing existing proprietary designs and developing new designs. The first InP-based power amplifier modules should be available for handset OEM sampling early next year.

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