Qualcomm and Teleepoch
Enter Into a 3G CDMA Subscriber Unit License Agreement, October
6, 2007
MTN chooses Cambridge Broadband
Networks for multi-service wireless network in Rwanda, October 6,
2007
Brazilian government to
publish 3G bidding rules soon, October 6, 2007
KTF 3G service suffers
from technical problems, October 6, 2007
Argentina’s Personal
lunches 3G service in Rosario, October 6, 2007
Russia has it's first 3G
network, October 6, 2007
AT&T could drop Alcatel-Lucent
as 3G mobile network supplier, October 6, 2007
Enea Extends License Agreement
with ZTE for 3G Handsets, October 2, 2007
LG to unveil premium handsets
in Brazil, October 2, 2007
KTF 3G subscribers doubled
in less than 3 months, October 2, 2007
3G policy in India will
be non-uniform, October 2, 2007
- previous news
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FMA Introduces Two Mobile FCRAM Burst Mode Devices for 3G Cellular Phones
May 21, 2003
Fujitsu Microelectronics America (FMA) introduced a pair of Mobile FCRAM
devices for 3G mobile phones.
Based on the company's Fast Cycle RAM (FCRAM) architecture, the new 32Mbit
MB82DBS02163C and the 64Mbit MB82DBS04163B are the first FCRAM devices
to adopt burst mode for both read and write operations. "The new Mobile
FCRAMs enable the latest cell phone features, including a built-in digital
camera, along with video data streaming and other multimedia services.
They are designed to meet the growing memory requirements and high data
rates of mobile cellular systems," said Keith Horn, FMA's vice president
of marketing. "Our multi-chip packages with FCRAM and burst-mode Fujitsu
Flash memory deliver a small form factor that is ideal for mobile applications,"
he continued.
Each new FCRAM uses burst-mode operation compatible with the burst-read
operation of Flash memory, in which consecutive read operations are synchronized
to the system clock. Both devices also employ burst-write technology that
combines with the burst-read operation to deliver enhanced performance
compared with page-mode versions. The new FCRAMs can be operated in page
mode after the initial power-on. Both devices are user-configurable to
burst mode, so they retain the functionality inherent in the existing
design infrastructure.
Power consumption is also improved in the new Mobile FCRAMs, with a user-configurable
partial power-down mode designed to extend battery life. VDD active current
is 30mA, with power-down current at only 10 microAmps. Standby current
is 80 microAmps in the MB82DBS02163C and 120 microAmps in the MB82DBS04163B.
Pricing and Availability
The Mobile FCRAMs are available now in monolithic and multi-chip packages
together with Fujitsu Flash memory, or in wafer form for embedded applications.
Pricing will begin at $7 each in 100,000 volumes for the 32Mbit MB82DBS02163C
version, and $12 each for the 64Mbit MB82DBS04163B version in the same
quantities.
Future versions will expand burst frequency up to 100MHz, with densities
up to 128Mbits, reflecting Fujitsu's commitment to providing high-value-added
Application Specific Memories to meet customer and market requirements.
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3G Motorola A920
