Infineon Introduces Integrated SiGe Ultra Low Noise Amplifier for UMTS

date: September 25, 2001

Infineon Technologies today announced the availability of BGA622, an integrated Low Noise Amplifier (LNA) especially designed for the high linearity and sensitivity requirements of existing and next generation wireless applications including GSM, GPS, UMTS and Wireless LAN. Based on Infineon's B7HF Silicon-Germanium (SiGe) bipolar process technology the Monolithic Microwave IC offers very low noise figures and high gain for reliable and high performance mobile communication applications.

By addressing the specific front-end requirements such as high linearity, low noise figures and low power consumption, the BGA622 is an ideal solution for actual and future mobile applications up to 6 GHz, said Thomas Pollakowski, Vice President and General Manager Discretes from Infineon Technologies.

The high-end amplifier features a gain of 15 dB and an ultra low noise figure of 1.1 dB at 2.1 GHz, an industry wide new benchmark record for SiGe based LNA in volume production. The BGA622 takes full advantage of the high performance B7HF SiGe process technology, which allows transition frequencies of up to 75 GHz. The new LNA also provides matched input/outputs and requires no further external components for in-circuit application. A low supply current and an integrated on/off feature enable low power consumption and increased standby time for 3G handsets.

As a Plug and Play gain block the BGA622 can be combined with any 2G or 3G transceiver chip on the market to improve gain and NF at 900 MHz to 6 GHz.

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