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Samsung Begins Production of 256M SDRAMs for IMT-2000 Handsets

date: September 28, 2001

Samsung Electronics has announced that it has become the industry’s first to go into mass production of low-power-consuming 256M synchronous DRAMs. This move puts the company in an advantageous position in the memory market for next-generation information and communication products such as the 3G IMT-2000 handsets .

The low-power-consuming DRAMs sell for higher the price of the regular synchronous DRAMS used in PCs. These high-value-added devices offer the competitiveness needed for market leadership at a time when prices have plummeted for general-purpose DRAMs and the DRAM market for handheld electronic products has become huge.

Samsung’s new 256M SDRAM uses the 0.15-micron design rule and operates on just 2.5 volts (while other low-power SDRAMs require 3.3 volts). It is well suited for use in IMT-2000 handsets other next-generation mobile products. In addition to low voltage operation, Samsung has applied Partial Array Self Refresh, Temperature Compensated Self Refresh to address the critical issue of power consumption. The company’s latest device uses only one-tenth the power on standby mode that other SDRAMs require.

Samsung has also used the chip scale package, reducing the chip size to about half of SDRAMs in TSOP packages. Thus, the new 256M SDRAM is in step with the trend toward smaller and lighter finished products.

In March of this year, JEDEC, the international standards organization for electric and electronic products, formally adopted the low-power DRAM specifications submitted by Samsung Electronics at the end of last year. Now, demand for low-power DRAMs has grown rapidly for use in 3rd-generation mobile phones.

By being the first to begin mass production, Samsung is well positioned for market leadership, and the company expects to held at least 50% of low-power DRAM market next year.

 



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